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| (R) LCDP1511D DUAL LINE PROGRAMMABLE TRANSIENT VOLTAGE SUPPRESSOR FOR SLIC PROTECTION Application Specific Discretes A.S.D.TM FEATURES Dualline programmable transient suppressor Wide negative firing voltage range : VMGL = -80V Low dynamic switching voltages : VFP and VDGL Low gate triggering current : IGT = 5mA max Peak pulse current : IPP = 15 A (10/1000 s) Holding current : IH > 150 mA DESCRIPTION The LCDP1511D is a dual line protector which protects subscriber line interface circuits (SLIC) against transient overvoltages. Positive overvoltages are clamped with diodes towards GND, while negative overvoltages are suppressed by thyristors connected to GND. The breakdown voltage of the thyristors is determined by the voltage applied to the gate, generally -Vbat. SO8 FUNCTIONAL DIAGRAM TIP 1 1 8 RING 1 GATE 2 7 GND GATE 3 6 GND TIP 2 4 5 RING 2 COMPLIES WITH THE FOLLOWING STANDARDS: ITU-T K20 VDE0433 VDE0878 IEC1000-4-5 FCC Part 68 BELLCORE NWT-001089-CORE Peak Surge Voltage (V) 1000 2000 1500 level 2 level 2 1500 800 2500 1000 Voltage Waveform (s) 10/700 10/700 1.2/50 10/700 1.2/50 10/160 10/560 2/10 10/1000 Current Waveform (s) 5/310 5/310 1/20 5/310 8/20 10/160 10/560 2/10 10/1000 Admissible Ipp (A) 25 25 40 25 25 30 20 70 15 Necessary Resistor () 40 5 25 45 1/6 September 1999 - Ed:2A LCDP1511D ABSOLUTE MAXIMUM RATINGS (Tamb = 25C). Symbol IPP Parameter Peak pulse current (see note1) Value 10/1000s 5/310s 2/10s tp = 10ms tp = 1s 15 25 70 5 3.5 80 80 - 55 to + 150 260 Unit A IFSM VMLG VMGL Tstg TL Non repetitive surge peak on-state current (see note2) Maximum voltage LINE/GND Maximum voltage GATE/LINE Storage temperature range Lead temperature for soldering during 10s A V C C Note 1: Pulse waveform 10 / 1000 s 5 / 310 s 2 / 10 s tr = 10 s tr = 5 s tr = 2 s tp = 1000 s tp = 310 s tp = 10 s % IPP 100 50 0 tr tp Note 2 : Maximum current flowing through the 4 wires together. t THERMAL RESISTANCE Symbol Rth (j-a) Junction to ambient Parameter Value 170 Unit C/W ELECTRICAL CHARACTERISTICS (Tamb = 25C) Symbol IGT IH IRM IRG VRM VGT VF VFP VDGL VGATE VRG C Parameter Gate triggering current Holding current Reverse leakage current LINE / GND Reverse leakage current GATE / LINE Reverse voltage LINE / GND Gate triggering voltage Forward drop voltage LINE / GND Peak forward voltage Dynamic switching voltage GATE / LINE GATE / GND voltage Reverse voltage GATE / LINE Capacitance LINE / GND IPP VDGL VR VRM VF IRM IR IH 2/6 LCDP1511D PARAMETERS RELATED TO THE DIODE LINE / GND (Tamb = 25C) Symbol VF VFP (note 1) Square pulse : tp = 500s 10/700s 1.2/50s 2/10s 1kV 1.5kV 2.5kV Test conditions IF = 1A RP = 60 RP = 60 RP = 245 IPP = 10A IPP = 15A IPP = 10A Max 2 5 10 20 Unit V V note 1 : see test circuit for VFP, RP is the protection resistor located on the line card PARAMETERS RELATED TO THE PROTECTION THYRISTOR (Tamb = 25C) Symbol IGT IH VGT IRG VDGL Test conditions VGND / LINE = -48V VGATE = -48V (see note 2) at IGT VRG = -75V VGATE = -48V 10/700s 1.2/50s 2/10s (see note 3) 1kV 1.5kV 2.5kV RP = 60 RP = 60 RP =245 IPP = 10A IPP = 15A IPP = 10A Min Max 5 Unit mA mA 150 2.5 5 V A 7 15 20 V note 2 : see functional holding current test circuit note 3 : See test circuit for VDGL The oscillations with a time duration lower than 50ns are not taken into account PARAMETERS RELATED TO LINE / GND (Tamb = 25C) Symbol IRM C VGATE / LINE = -1V Test conditions VRM = -75V Max 5 200 100 Unit A pF VR = -3V F = 1MHz VR = -48V F = 1MHz Fig. 1: Surge peakcurrent versus overloadduration. Fig. 2: Relative variation of holding current versus junction temperature. IH[Tj] / IH[Tj=25C] ITSM(A) 7 6 5 4 3 2 1 t(s) 0 0.01 0.10 1.00 10.00 100.00 1000.00 F=50Hz Tj initial=25C 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 -40 Tj(C) -20 0 20 40 60 80 100 120 3/6 LCDP1511D FUNCTIONAL HOLDING CURRENT (IH) TEST CIRCUIT : GO-NO GO TEST R - VP VBAT = - 48 V D.U.T. Surge generator This is a GO-NO GO test which allows to confirm the holding current (IH ) level in a functionaltest circuit. TEST PROCEDURE : - Adjust the current level at the IH value by short circuiting the D.U.T. - Fire the D.U.T. with a surge current : IPP = 15A, 10/1000s. - The D.U.T. will come back to the off-state within a duration of 50ms max. TEST CIRCUIT FOR VFP AND VDGL PARAMETERS (V is defined in unload condition) P R4 TIP R2 RING R3 L VP C1 R1 C2 G ND Pulse (s) tr 10 1.2 2 tp 700 50 10 Vp (V) 1000 1500 2500 C1 (F) 20 1 10 C2 (nF) 200 33 0 L (H) 0 0 1.1 R1 () 50 76 1.3 R2 () 15 13 0 R3 () 25 25 3 R4 () 25 25 3 IPP (A) 10 15 10 Rp () 60 60 245 4/6 LCDP1511D APPLICATION CIRCUIT: PABX line protection LCDP1511D PTC or Fuse -Vbat RP Line 1 Ring relay protection Ring relay 1 SLIC RP P PTC or Fuse -Vbat PTC or Fuse RP Line 2 Ring relay protection Ring relay 2 SLIC RP PTC or Fuse APPLICATION CIRCUIT: Line Card protection LCDP1511D PTC or Fuse RP -Vbat Line 1 CLP30-200B1 Ring relay 1 SLIC RP PTC or Fuse -Vbat PTC or Fuse RP Line 2 CLP30-200B1 Ring relay 2 SLIC RP PTC or Fuse 5/6 LCDP1511D PACKAGE MECHANICAL DATA SO8 (Plastic) DIMENSIONS REF. A a1 L c1 C a3 a2 A b1 Millimetres Inches Min. Typ. Max. Min. Typ. Max. 0.1 0.65 0.35 0.19 0.25 4.8 5.8 1.27 3.81 3.8 0.4 4.0 0.15 1.27 0.016 0.6 8 (max) 0.50 1.75 0.25 0.004 1.65 0.85 0.025 0.48 0.014 0.25 0.007 0.50 0.010 45 (typ) 5.0 6.2 0.189 0.228 0.050 0.150 0.157 0.050 0.024 0.069 0.010 0.065 0.033 0.019 0.010 0.020 0.197 0.244 a2 a3 b b1 C c1 D E e e3 F L M S S b e3 e a1 E D M 8 5 F 1 4 Ordre code LCDP1511D LCDP1511DRL Marking LCDP15 LCDP15 Package SO8 SO8 Weight 0.077 g 0.077 g Base qty 100 2500 Delivery mode Tube Tape & reel Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics (c) 1999 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 6/6 |
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